A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 20 mA 25 V
BV
CES
I
C
= 10 mA 45 V
BV
EBO
I
E
= 1.0 mA 3.5 V
h
FE
V
CE
= 5.0 V I
C
= 200 mA 15 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 7.0 pF
P
G
η
C

V
CE
= 28 V P
out
= 5.0 W f = 400 MHz
10
50
12
55
dB
%

NPN SILICON RF POWER TRANSISTOR
PT9701


DESCRIPTION:
The ASI PT9701 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.

FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
I
C
1.25 A
V
CES
45 V
P
DISS
14 W @ T
C
= 25 °C
T
J
-55 °C to +200 °C
T
STG
-55 °C to +200 °C
θ
JC
12 °C/W
PACKAGE STYLE .280 4L STUD




1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER