ASIMRAL2023-6
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:14.57KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 50 mA 40 V
BV
EBO
I
E
= 1.0 mA 3.5 V
I
CBO
V
CB
= 22 V 1.25 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA 10 90 ---
C
OB
V
CB
= 22 V f = 1.0 MHz 10 pF
P
G
η
C
V
CE
= 22 V P
OUT
= 6.0 W f = 2000 to 2300 MHz
6.8
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL2023-6
PACKAGE STYLE .250 2L FLG (C)
1 = COLLECTOR 2 = BASE
3 = EMITTER
DESCRIPTION:
The ASI MRAL2023-6 is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I
C
1.25 A
V
CES
40 V
P
DISS
21 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
8.0 °C/W