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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ASIMRAL2023-6

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:14.57KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 50 mA 40 V
BV
EBO
I
E
= 1.0 mA 3.5 V
I
CBO
V
CB
= 22 V 1.25 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA 10 90 ---
C
OB
V
CB
= 22 V f = 1.0 MHz 10 pF
P
G

η
C

V
CE
= 22 V P
OUT
= 6.0 W f = 2000 to 2300 MHz
6.8
40


dB
%

NPN SILICON RF POWER TRANSISTOR
MRAL2023-6

PACKAGE STYLE .250 2L FLG (C)




1 = COLLECTOR 2 = BASE
3 = EMITTER

DESCRIPTION:

The ASI MRAL2023-6 is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.

FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I
C
1.25 A
V
CES
40 V
P
DISS
21 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
8.0 °C/W