BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
1 (8)
Silicon NPN High Voltage Switching Transistor
Features
C0068 Simple-sWitch-Off Transistor (SWOT)
C0068 HIGH SPEED technology
C0068 Planar passivation
C0068 100 kHz switching rate
C0068 Very low switching losses
C0068 Very low dynamic saturation
C0068 Very low operating temperature
C0068 Optimized RBSOA
C0068 High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
14283
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
CEO
400 Vg
V
CEW
500 V
V
CES
700 V
Emitter-base voltage V
EBO
11 V
Collector current I
C
11 A
Collector peak current I
CM
16.5 A
Base current I
B
5.5 A
Base peak current I
BM
8 A
Total power dissipation T
case
≤ 25C0176C P
tot
70 W
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
case
= 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction case R
thJC
1.78 K/W