4AM13
器件描述：Silicon N-Channel/P-Channel Power MOS FET Array
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：122.82KB，共10页
Sponsor by e络盟器件资料摘要：
4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A
P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A
P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver