BUL1102EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
a73 FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
September 2003
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1100 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 12 V
IC Collector Current 4 A
I
CM
Collector Peak Current (t
p
<5 ms) 8 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
<5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C30W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
1500
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-220FP
®
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