1.9
0.95
0.95
1.0
2.4
1.3
0.4
2.9





AV945LT1 TRANSISTOR（ NPN ）

FEATURES

Power dissipation
PCM : 0.2 W（ Tamb=25℃）
Collector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150
ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless
otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1m A， IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， IB=0 50 V
Collector-emitter breakdown voltage V(BR)EBO Ic= 100μ A， IB=0 5 V
Collector cut-off current ICBO VCB=60 V , IE=0 0.1 μ A
Collector cut-off current ICEO VCB=45 V , IE=0 0.1 μ A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μ A
hFE(1) VCE= 6V, IC= 1mA 130 400
DC current gain
hFE(2) VCE= 6V, IC= 0.1mA 40
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 10mA 1 V
Base-emitter voltage VBEF IE= 310mA 1.4 V
Transition frequency fT VCE=6V, IC= 10mA f=
30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 130 - 200 200 - 400
MARKING CR

























Unit : mm
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR