@vic AV8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR
QW-R201-012,A

LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR

FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S

APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications


TO-92
1

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS SYMBOL RATING UNITS
Collector-base voltage VCBO -30 V
Collector-emitter voltage VCEO -20
Emitter-base voltage VEBO -5 V
Collector dissipation(Ta=25°C) Pc 1 W
Collector current Ic -700 mA
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -30 V
Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 V
Emitter-base breakdown voltage BVEBO IE=-100µA,Ic=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -1 uA
Emitter cut-off current IEBO EB=-5V,Ic=0 -100 nA
DC current gain(note) hFE1
hFE2
hFE3
VCE=-1V,Ic=-1mA
VCE=-1V,Ic=-150 mA
VCE=-1V,Ic=-500mA
100
120
40

110

400

Collector-emitter saturation voltage VCE(sat) Ic=-500mA,IB=-50mA -0.5 V
Base-emitter saturation voltage VBE(sat) Ic=500mA,IB=-50mA -1.2 V
Base-emitter saturation voltage VBE VCE=-1V,Ic=-10mA -1.0 V
Current gain bandwidth product fT CE=-10V,Ic=-50mA 100 MHz
Output capacitance Cob VCB=10V,IE=0
f=1MHz
9.0 pF