@vic AV966

TO-92MOD Plastic-Encapsulate Transistors


AV966 TRANSISTOR（ PNP ）

FEATURE
Power dissipation
PCM : 0.9 W（ Tamb=25℃）
Collector current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : -30 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -1mA ， IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -1mA， IC=0 -5 V
Collector cut-off current ICBO VCB= -30 V , IE=0 -0.1 μ A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μ A
DC current gain hFE（ 1） VCE=-2 V, IC= -500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC= -1.5 A, IB= -0.03A -2 V
Base-emitter voltage VBE IC= -500 mA, VCE= -2V -1 V
Transition frequency f T VCE= -2 V, IC= -500mA 100 MHz

CLASSIFICATION OF hFE(1)
Rank O Y
Range 100-200 160-320




TO - 92MOD

1.EMITTER

2.COLLECTOR

3.BASE



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