@vic AV8050

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV8050 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 1 W（Tamb=25℃）
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃





ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 100 μA ， I
E
=0 40 V
Collector-emitter breakdown voltage V(BR)
CEO
I
C
= 0.1 mA , I
B
=0 25 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 100 μA， I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
= 40 V , I
E
=0 0.1 μA
Collector cut-off current I
CEO
V
CE
= 20 V , I
B
=0 0.1 μA
Emitter cut-off current I
EBO
V
EB
= 5 V , I
C
=0 0.1 μA
H
FE
（
1
） V
CE
= 1 V , I
C
= 100 mA 85 300
DC current gain
H
FE
（
2
） V
CE
= 1 V , I
C
=800 mA 40
Collector-emitter saturation voltage V
CE
(sat) I
C
= 800 mA, I
B
= 80 mA 0.5 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 800mA, I
B
= 80 mA 1.2 V
Base-emitter voltage V
BE
I
E
= 1.5A 1.6 V
Transition frequency f
T

V
CE
= 10 V, I
C
= 50mA

f =30 MHz
190 MHz

CLASSIFICATION OF HFE(1)
Rank
B C D
Range 85-160 120-200 160-300



1 2 3

TO—92




1. EMITTER

2. BASE

3.COLLECTOR