@vic AV965

TO-92 Plastic-Encapsulate Transistors




AV965 TRANSISTOR（ NPN ）

FEATURES

Power dissipation
PCM : 0.75 W（ Tamb=25℃）
Collector current
ICM : 5 A
Collector-base voltage
V(BR)CBO : 42 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=1m A， IE=0 42 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 22 V
Emitter-base breakdown voltage V(BR)EBO IE= 10 μ A， IC=0 6 V
Collector cut-off current ICBO VCB= 30 V , IE=0 0.1 μ A
Emitter cut-off current IEBO VEB= 6 V， IC=0 0.1 μ A
HFE（ 1） VCE= 2 V, IC= 0.15 mA 150
HFE（ 2） VCE= 2V, IC = 500 mA 340 950 DC current gain
HFE（ 3） VCE= 2V, IC = 2000 mA 150
Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V


CLASSIFICATION OF HFE(2)
Rank R T
Range 340-600 560-950



1 2 3

TO— 92




1.EMITTER

2. COLLECTOR

3. BASE