@vic AV9014

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV9014 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 0.4 W（ Tamb=25℃）
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
， T
stg
: -55℃ to +150℃






ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 100 μ A， I
E
=0 50 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 0. 1 mA， I
B
=0 45 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 100 μ A， I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=50 V , I
E
=0 0.1 μ A
Collector cut-off current I
CEO
V
CE
=35 V , I
B
=0 0.1 μ A
Emitter cut-off current I
EBO
V
EB
= 3 V， I
C
=0 0.1 μ A
DC current gain H
FE
V
CE
= 5 V, I
C
= 1mA 60 1000
Collector-emitter saturation voltage V
CE
(sat) I
C
= 100mA, I
B
= 5 mA 0.3 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 100 mA, I
B
= 5mA 1 V
Transition frequency f
T

V
CE
= 5 V, I
C
= 10mA

f =30MHz
150 MHz


CLASSIFICATION OF HFE

Rank A B C D
Range 60-150 100-300 200-600 400-1000




1 2 3

TO—92




1. EMITTER

2. BASE

3.COLLECTOR