@vic AV772

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-126 Plastic-Encapsulate Transistors

AV772 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P
CM
: 1.25 W（Tamb=25℃）
Collector current
I
CM
: -3 A
Collector-base voltage
V
(BR)CBO
: - 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃






ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= -100μA， I
E
=0 -40 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= -10 mA， I
B
=0 -30 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= -100μA， I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
= -40 V， I
E
=0 -1 µA
Collector cut-off current I
CEO
V
CE
= -30 V， I
B
=0 -1 µA
Emitter cut-off current I
EBO
V
EB
= -6 V， I
C
=0 -1 µA
H
FE
（
1
） V
CE
= -2 V, I
C
= -1A 60 400
DC current gain
H
FE
（
2
） V
CE
= -2 V, I
C
= -100mA 32
Collector-emitter saturation voltage V
CE(sat)
I
C
= -2A, I
B
= -0.2 A -0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= -2A, I
B
= -0.2 A -2 V
Transition frequency f
T

V
CE
= -5V , Ic=-0.1A
f =10MHz
50 MHz

CLASSIFICATION OF HFE(1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400






TO-126