@vic AV9012

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV9012 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P
CM
: 0.625 W（ Tamb=25℃）
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
， T
stg
: -55℃ to +150℃





ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= -100μ A， I
E
=0 -40 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= -0. 1 mA， I
B
=0 -25 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= -100μ A， I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
=-40 V I
E
=0 -0.1 μ A
Collector cut-off current I
CEO
V
CE
=- 20 V I
B
=0 -0.2 μ A
Emitter cut-off current I
EBO
V
EB
= - 5 V， I
C
=0 -0.1 μ A
H
FE
（
1
） V
CE
= -1 V, I
C
= -50 mA 64 300
DC current gain
H
FE
（
2
） V
CE
= -1V, I
C
=-500 mA 40
Collector-emitter saturation voltage V
CE
(sat) I
C
=-500 mA, I
B
=-50 mA -0.6 V
Base-emitter saturation voltage V
BE
(sat) I
C
=-500mA,I
B
=-50 mA -1.2 V
Base-emitter voltage V
EB
I
E
=-100mA -1.4 V
Transition frequency f
T

V
CE
=- 6 V, I
C
= -20 mA

f =30MHz
150 MHz

CLASSIFICATION OF HFE(1)
Rank D E F G H I
Range 64-91 78-112 96-135 112-166 144-202 190-300


1 2 3

TO—92




1. EMITTER

2. BASE

3.COLLECTOR