@vic AV733

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV733 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P
CM
: 0.25 W（Tamb=25℃）
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: -60 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃






ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= -5 μA ， I
E
=0 -60 V
Collector-emitter breakdown voltage V(BR)
CEO
I
C
= -1 mA , I
B
=0 -50 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= -50 μA， I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
= -60 V , I
E
=0 -0.1 μA
Emitter cut-off current I
EBO
V
EB
= -5 V , I
C
=0 -0.1 μA
DC current gain HFE（1） V
CE
= -6 V, I
C
= -1mA 90 200 600
Collector-emitter saturation voltage V
CE
(sat) I
C
= -100mA, I
B
=- 10mA -0.18 -0.3 V
Transition frequency f
T

V
CE
= -6 V, I
C
=-10mA

f = 30MHz
100 180 MHz

CLASSIFICATION OF HFE
(1)

Rank
R Q P K
Range 90-180 135-270 200-400 300-600







1 2 3

TO—92




1. EMITTER

2. COLLECTOR

3.BASE