TO-92 Plastic-Encapsulate Transistors


AV4403
TRANSISTOR（PNP ）

FEATURES
Power dissipation
PCM : 0.625 W （ Tamb=25℃）
Collector current
ICM : -0.6 A
Collector-base voltage
V(BR)CBO : -40 V

Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100μ A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μ A, IC=0 -5 V
Collector cut-off current ICBO VCB=-35 V , IE=0 -0.1 μ A
Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 μ A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 μ A
DC current gain hFE(1) VCE=-2 V, IC=- 150mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC= -150 mA, IB=-15mA -0.95 V
Transition frequency f T
VCE= -10V, IC= -20mA

f = 100MHz
200 MHz



1 2 3

TO— 92




1.EMILTTER

2.BASE

3. COLLECTOR
@vic 　　 AV4403
Copyright @vic Electronics Corp. 1 　　 Website http://www.avictek.com