1.9
0.95
0.95
2.9
0.4
1.3
2.4
1.0





AV42LT1 TRANSISTOR（ NPN ）

FEATURES

Power dissipation
PCM : 0.3 W（ Tamb=25℃）
Collector current
ICM: 0.3 A
Collector-base voltage
V(BR)CBO : 300 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 μ A， IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 5 V
Collector cut-off current ICBO VCB=200 V , IE=0 0.25 μ A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μ A
HFE（ 1） VCE= 10V, IC= 1mA 60
HFE（ 2） VCE= 10V, IC=10mA 100 200 DC current gain
HFE（ 3） VCE=10V, IC=30mA 60
Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V
Transition frequency fT
VCE= 20V, IC= 10mA

f=30MHz
50 MHz

DEVICE MARKING
MMBTA42LT1=1D




























Unit : mm
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR