@vic AV42

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

A42 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 0.625 W（Tamb=25℃）
Collector current
I
CM
: 0.3 A
Collector-base voltage
V
(BR)CBO
: 300 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃





ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 100μA， I
E
=0 300 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 1 mA， I
B
=0 300 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 10μA， I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
= 200 V I
E
=0 0.25 μA
Emitter cut-off current I
EBO
V
EB
= 3 V， I
C
=0 0.25 μA
H
FE
（
1
） V
CE
= 10 V, I
C
= 1 mA 25
H
FE
（
2
） V
CE
= 10V, I
C
= 10 mA 80 250 DC current gain
H
FE
（
3
） V
CE
= 10 V, I
C
= 50 mA 25
Collector-emitter saturation voltage V
CE
(sat) I
C
= 20 mA, I
B
= 2 mA 0.5 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 20mA, I
B
= 2 mA 0.9 V
Transition frequency f
T

V
CE
= 5 V, I
C
= 10 mA

f =30MHz
50 MHz

CLASSIFICATION OF HFE
(2)
Rank
A B
1
B
2
C
Range 80-100 100-150 150-200 200-250




1 2 3

TO—92




1. EMITTER

2. BASE

3.COLLECTOR