@vic AV3906

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-92 Plastic-Encapsulate Transistors

AV3906 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P
CM
: 0.625 W（Tamb=25℃）
Collector current
I
CM
: -0.2 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃






ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= -100 μA ， I
E
=0 -40 V
Collector-emitter breakdown voltage V(BR)
CEO
I
C
= -1 mA , I
B
=0 -40 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= -100 μA， I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
= -40 V , I
E
=0 -0.1 μA
Collector cut-off current I
CEo
V
CB
= -40 V , I
B
=0 -0.1 μA
Emitter cut-off current I
EBO
V
EB
= -5 V , I
C
=0 -0.1 μA
H
FE
（
1
） V
CE
= -1 V , I
C
= -10 mA 100 300
DC current gain
H
FE
（
2
） V
CE
= -1 V , I
C
=-50 mA 60
Collector-emitter saturation voltage V
CE
(sat) I
C
= -50 mA, I
B
= -5mA -0.4 V
Base-emitter saturation voltage V
BE
(sat) I
C
= -50mA, I
B
= -5 mA -0.95 V
Transition frequency f
T

V
CE
= -20 V, I
C
= -10 mA

f =100 MHz
250 MHz

CLASSIFICATION OF HFE
(1)

Rank
O Y G
Range 100-200 200-300 300-400



1 2 3

TO—92




1. EMITTER

2. BASE

3. COLLECTOR