Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
75 Vdc
Emitter–Base Voltage V
EBO
6.5 Vdc
Collector Current — Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40 — Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 C0109Adc, I
E
= 0)
V
(BR)CBO
75 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109Adc, I
C
= 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
CEX
— 10 nAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
—
—
0.01
10
µAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
— 10 nAdc
Collector Cutoff Current
(V
CE
= 10 V)
I
CEO
— 10 nAdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
BEX
— 20 nAdc
AV2222@vic
C0050C0078C0050C0050C0050C0050
TO–92
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER