1Cp
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–40 Vdc
Collector–Base Voltage V
CBO
–60 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–40 — Vdc
Collector–Base Breakdown Voltage
(I
C
= –10 C0109Adc, I
E
= 0)
V
(BR)CBO
–60 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 C0109Adc, I
C
= 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
I
CEX
— –50 nAdc
Collector Cutoff Current
(V
CB
= –50 Vdc, I
E
= 0)
(V
CB
= –50 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
—
—
–0.01
–10
µAdc
Emitter Cutoff Current
(V
EB
= –3.0 Vdc)
I
EBO
— –10 nAdc
Collector Cutoff Current
(V
CE
= –10 V)
I
CEO
— –10 nAdc
Base Cutoff Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
I
BEX
— –50 nAdc
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
AV2907@vic
C0050C0078C0050C0057C0048C0055
TO–92
1
2
3
Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com
COLLECTOR
3
2
BASE
1
EMITTER