@vic AV13005

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-220 NPN SILICON POWER TRANSISTOR

AV13005 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 1.5 W（Tamb=25℃）
Collector current
I
CM
: 4.0 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃





ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 1000μA， I
E
=0 700 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 10 mA， I
B
=0 400 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 1000μA， I
C
=0 9 V
Collector cut-off current I
CBO
V
CB
= 700 V I
E
=0 1000 μA
Collector cut-off current I
CEO
V
CE
= 400 V I
B
=0 100 μA
Emitter cut-off current I
EBO
V
EB
= 9 V， I
C
=0 1000 μA
DC current gain
H
FE
（
2
） V
CE
= 5V, I
C
= 1000 mA 10 40
Collector-emitter saturation voltage V
CE
(sat) I
C
= 2000 mA, I
B
= 500 mA 0.6 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 2000mA, I
B
= 500mA 1.6 V
Transition frequency f
T

V
CE
= 10 V, I
C
= 500 mA

f =1MHz
5 MHz
Fall time T
F
0.9
Storage time T
S

I
B1
= - I
B2
=0.4A, I
C
=2A
V
CC
=120V
4.0
μS

CLASSIFICATION OF HFE
(2)
Rank
A B
1
B
2
C D E
Range 10-15 15-20 20-25 25-30 30-35 35-40