@vic AV1815

TO-92 Plastic-Encapsulate Transistors



AV1815 TRANSISTOR（ NPN ）

FEATURES

Power dissipation
PCM : 0.4 W（ Tamb=25℃）
Collector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μ A， IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA， IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 5 V
Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 μ A
Collector cut-off current ICEO VCE= 50 V , IB=0 0.1 μ A
Emitter cut-off current IEBO VEB= 5 V， IC=0 0.1 μ A
DC current gain hFE（ 1） VCE= 6 V, IC= 2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V
Transition frequency fT
VCE= 10 V, IC=
1mA

f=30MHz
80 MHz
CLASSIFICATION OF hFE(1)
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700


1 2 3

TO— 92

1.EMITTER

2.COLLECTOR

3.BASE