1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0


SOT-23 Plastic-Encapsulate Transistors


AV9012LT1 TRANSISTOR (PNP)

FEATURES

Power dissipation
P
CM:
0.3 W (Tamb=25℃)
Collector current
I
CM:
-0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100µA, I
E
=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO I
E
=-100µA, I
C
=0 -5 V
Collector cut-off current ICBO VCB=-40 V, IE=0 -0.1 µA
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA
h
FE(1)
V
CE
=-1V, I
C
= -50mA 120 400
DC current gain
h
FE(2)
V
CE
=-1V, I
C
=-500mA 40
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V
Transition frequency f
T

V
CE
=-6V, I
C
= -20mA
f=30MHz
150 MHz
CLASSIFICATION OF h
FE(1)

Rank L H J
Range 120-200 200-350 300-400

DEVICE MARKING S9012LT1=2T1


























Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR