1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0


SOT-23 Plastic-Encapsulate Transistors


MMBT3904LT1 TRANSISTOR (NPN)

FEATURES

Power dissipation
P
CM:
0.2 W (Tamb=25℃)
Collector current
I
CM:
0.2 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, I
E
=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO I
E
= 100µA, I
C
=0 6 V
Collector cut-off current ICBO VCB= 60V, IE=0 0.1 µA
Collector cut-off current ICEO VCE= 40V, IB=0 0.1 µA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA
H
FE(1)
V
CE
=10V, I
C
= 1mA 100 300
DC current gain
H
FE(2)
V
CE
= 1V, I
C
= 50mA 60
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V
Transition frequency f
T

V
CE
= 20V, I
C
= 10mA
f=100MHz
250 MHz
Delay Time td 35 nS
Rise Time tr
V
CC
=3.0Vdc, V
BE
=-0.5Vdc
I
C
=10mAdc, I
B1
=1.0mAdc
35 nS
Storage Time ts 200 nS
Fall Time tf
V
CC
=3.0Vdc, I
C
=10mAdc
I
B1
=I
B2
=1.0mAdc
50 nS
DEVICE MARKING
MMBT3904LT1=1AM


























Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR