@vic 2N5551
NPN General Purpose Amplifier
FEATURES & USE
®
High Collector Breakdown Voltage; Low Noise;
®
Complementary to 2N5401
®
This device is designed as a general purpose amplifier and switch for
applications requiring high voltages.
TO – 92

1.Emitter 2.Base 3.Collector


Absolute Maximum Ratings Ta = 25`C

Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 600 mA
TJ Junction Temperature 150 `C
TSTG Storage Temperature -55 - 150 `C

Electrical Characteristics Ta = 25`C

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=1000 A
 IE=0 180 V
BVCEO Collector-Emitter Breakdown Voltage IC=1mA
 IB=0 160 V
BVEBO Emitter-Base Breakdown Voltage IE=1000 A
 IC=0 5 V
ICBO Collector Cut-off Current VCB=120V, IE=0 200 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 200 nA
HFE DC Current Gain VCE=5V, IC=10mA 80 300
VCE(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=5mA 0.25 V
VBE(sat) Base-Emitter Saturation Voltage IC=50mA, IB=5mA 1.0 V
hFE Classification
Classification A B1 B2 C1 C2 C3
hFE 50-100 100-150 150-200 200-230 230-250 250-300


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