P-TO263-15-1
Data Sheet 1 2002-06-28
TrilithIC
Data Sheet
BTS 781 GP
1Overview
1.1 Features
Quad D-MOS switch
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low R
DS ON
: 26 mΩ high-side switch, 14 mΩ low-side
switch (typical values @ 25 °C)
Maximum peak current: typ. 42 A @ 25 °C=
Very low quiescent current: typ. 4 µA @ 25 °C=
Small outline, thermal optimized PowerPak
Load and GND-short-circuit-protection
Operates up to 40 V
Status flag for over temperature
Open load detection in Off-mode
Overtemperature shut down with hysteresis
Internal clamp diodes
Isolated sources for external current sensing
Under-voltage detection with hysteresis

1.2 Description
The BTS 781 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS
®
technology
which combines low R
DS ON
vertical DMOS power stages with CMOS control circuit. The
high-side switch is fully protected and contains the control and diagnosis circuit. To
achieve low R
DS ON
and fast switching performance, the low-side switches are
manufactured in S-FET 2 logic level technology. The equivalent standard product is the
SPD30N06S2L-13.
Type Ordering Code Package
BTS 781 GP Q67006-A9526 P-TO263-15-1