Semiconductor Group 1 Jan-20-1997
BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f
T
= 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 136W PAs Q62702-F1575 1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
150 mA
Base current I
B
20
Total power dissipation
T
S
≤ 60 °C
P
tot
1000
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 90 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.