BCU83-SMD
器件描述:NPN EPITAXIAL PLANAR SILICON TRANSISTOR
文件大小:19.12KB,共2页
Sponsor by e络盟
器件资料摘要:
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
V
CEO
Collector – Emitter voltage
V
CBO
Collector – Base voltage
V
EBO
Emitter – Base voltage
I
C
Collector current
I
C(PK)
Peak Collector current
P
tot
Total Dissipation at T
case
= 25°C
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
20V
60V
6V
5A
8A
0.9W
–55 to 150°C
150°C
BCU83–SMD
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver applications
requiring low loss devices
FEATURES
LOW V
CE(SAT)
HIGH CURRENT
HIGH ENERGY RATING
APPLICATIONS
ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICESSOT89
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Prelim. 1/94
G31G2EG35G31G2EG36
G34G2EG35
G32G2E
G35
G31G2E
G30
G34G2E
G32G35G20
G6D
G61G78
G2E
G31G2EG35
G33G2EG30
G30G2EG34G30
G30G2EG35G30
G30G2EG34G30
G45G43G42