ADG636
器件描述：1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
器件厂商：AD [Analog Devices]
文件大小：147.68KB，共12页
Sponsor by e络盟器件资料摘要：
REV.0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG636
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
1 pC Charge Injection, 100 pA Leakage
CMOS H115505 V/+5 V/+3 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D16
D29
S2B
S2A
S1B
ENA1A0
1412
4
5
11
10
LOGIC
FEATURES
1 pC Charge Injection
H115502.7 V to H115505.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40H11543C to +125H11543C
100 pA (Max @ 25H11543C) Leakage Currents
85 H9024 Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 H9262W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
It offers on-resistance of 85 Ω typ, which is matched to within
2 Ω between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. Ultralow Charge Injection (Q
INJ
: ±1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85°C
3. Dual ±2.7 V to ±5 V or Single +2.7 V to +5.5 V Supply
4. Automotive Temperature Range: –40°C to +125°C
5. Small 14-Lead TSSOP Package
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG636
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
1 pC Charge Injection, 100 pA Leakage
CMOS H115505 V/+5 V/+3 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D16
D29
S2B
S2A
S1B
ENA1A0
1412
4
5
11
10
LOGIC
FEATURES
1 pC Charge Injection
H115502.7 V to H115505.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40H11543C to +125H11543C
100 pA (Max @ 25H11543C) Leakage Currents
85 H9024 Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 H9262W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
It offers on-resistance of 85 Ω typ, which is matched to within
2 Ω between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. Ultralow Charge Injection (Q
INJ
: ±1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85°C
3. Dual ±2.7 V to ±5 V or Single +2.7 V to +5.5 V Supply
4. Automotive Temperature Range: –40°C to +125°C
5. Small 14-Lead TSSOP Package