2SK3085
2002-08-09 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (G70-MOSV)
2SK3085

Chopper Regulator, DC-DC Converter and Motor Drive
Applications


Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 1.7 Ω (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 3 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 600 V)
Gb7G20 Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
600 V
Gate-source voltage V
GSS
Gb130 V
DC (Note 1) I
D
3.5
Drain current
Pulse (Note 1) I
DP
14
A
Drain power dissipation (Tc G3d 25°C) P
D
75 W
Single pulse avalanche energy
(Note 2)
E
AS
227 mJ
Avalanche current I
AR
3.5 A
Repetitive avalanche energy (Note 3) E
AR
7.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.67 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
83.3 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
G3d 90 V, T
ch
G3d 25°C, L G3d 28.8 mH, R
G
G3d 25 G57, I
AR
G3d 3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm


JEDEC TO-220AB
JEITA SC-46
TOSHIBA 2-10P1B
Weight: 2.0 g (typ.)