Silicon Junction FETs (Small Signal)
1
Publication date: August 2003 SJF00039AED
2SK1860
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
■ Features
• High mutual conductance g
m
• Low noise voltage of NV
■ Absolute Maximum Ratings T
a
= 25°C
1: Drain
2: Source
3: Gate
Minit3-F1 Package
Unit: mm
–0.05
+0.10
0.40 –0.01
+0.02
0.12
2.1
±
0.1
1.5
±
0.2
2.20
±
0.15
0.7
±
0.1
5.8
±
0.2
2.9±0.2
1.9±0.1
(0.95)
(0.5)
(0.95)
2
3
1
10˚
5
˚
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: ∆G
v ·
f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Parameter Symbol Rating Unit
Drain-source voltage (Gate open) V
DSO
20 V
Drain-gate voltage (Souse open) V
DGO
20 V
Drain-source current (Gate open) I
DSO
2mA
Drain-gate current (Souse open) I
DGO
2mA
Gate-source cutoff current (Drain open) I
GSO
2mA
Power dissipation P
D
200 mW
Operating ambient temperature T
opr
−20

to

+80 °C
Storage temperature T
stg
−55

to

+150 °C
Parameter Symbol Conditions Min Typ Max Unit
Drain current I
D
V
DS
= 4.5 V, C
O
= 10 pF|R
D
= 2.2 kΩ ± 1% 100 600 µA
Drain-sourse cutoff current I
DSS
V
DS
= 4.5 V, V
GS
= 0 95 480 µA
(G-S short)
Mutual conductance g
m
V
D
= 4.5 V, V
GS
= 0| f = 1 kHz 700 1 600 µS
Noise voltage NV V
D
= 4.5 V, R
D
= 2.2 kΩ ± 1% 4 µV
C
O
= 10 pF, A-curve
Voltage gain G
v1
V
D
= 4.5 V, R
D
= 2.2 kΩ ± 1% −32 dB
C
O
= 10 pF, e
G
= 10 mV| f = 1 kHz
G
v2
V
D
= 12 V, R
D
= 2.2 kΩ ± 1% 0 3.3 dB
C
O
= 10 pF, e
G
= 10 mV| f = 1 kHz
G
v3
V
D
= 1.5 V, R
D
= 2.2 kΩ ± 1% −4.5 − 0.3 dB
C
O
= 10 pF, e
G
= 10 mV| f = 1 kHz
∆G
v ·
f
*
V
D
= 4.5 V, R
D
= 2.2 kΩ ± 1% 0 1.5 dB
C
O
= 10 pF, e
G
= 10 mV| f = 1 kHz to 70 Hz
Voltage gain difference ∆G
v2 −
G
v1
 0 3.5 dB
∆G
v1 −
G
v3
 0 3.5 dB
Marking Symbol: 1H