2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
Rev.A 1/3
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S


zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)


zAbsolute maximum ratings (Ta=25°C)
Storage temperature
Junction temperature
Collector current
Emitter-base voltage
Collector-emitter voltage
Collector-base voltage
Collector power
dissipation
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
12
0.15
0.2
0.2
0.15
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
∗
W
0.3
2SD2351, 2SD2226K
2SD2654, 2SD2707
2SD2227S
°C
°C
∗Single pulse Pw=100ms



zPackaging specifications and hFE
Type 2SD2351
UMT3
VW
BJ
∗
T106
3000
2SD2654
EMT3
VW
BJ
∗
TL
3000
2SD2707
VMT3
VW
BJ
∗
T2L
8000
2SD2226K
SMT3
VW
BJ
∗
T146
3000
2SD2227S
SPT
VW
−
TP
5000
∗
Denotes hFE
package
hFE
Marking
Code
Basic ordering unit (pleces)


















zExternal dimensions (Unit : mm)
(1) Emitter
(2) Base
(3) Collector
(1) Base
(2) Emitter
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.61.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.01.3
(
1
)
0.65
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0.8
0.15
0~0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4 (
3
)
2.91.9
0.95
0.95
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Taping specifications
0.45
2.5
(1) (2) (3)
(
15Min.
)
5
3
3Min.
0.450.5
42
ROHM : EMT3
EIAJ : SC-75A
ROHM : EMT3
ROHM : UMT3
EIAJ : SC-70
2SD2654
2SD2707
2SD2351
2SD2226K
2SD2227S
(3)0.32
0.81.2
0.13
0.5
0.22
0.4
0.4
1.2
0.80.2 0.2
(2)
(1)