Power Transistors
1
Publication date: May 2003 SJD00244BED
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Forward current transfer ratio h
FE1

*
1, 2
V
CE
= 10 V, I
C
= 0.5 A 85 340 
h
FE2

*
1
V
CE
= 5 V, I
C
= 1 A 50 100
h
FE3
V
CE
= 10 V, I
C
= 1 mA 35
Collector-emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 11 pF
(Common base, input open circuited)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
1: Emitter
2: Collector
3: Base
MT-3-A1 Package