2SC5788
器件描述：Silicon NPN epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：73.64KB，共3页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: November 2002 SJD00290AED
2SC5788
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High-speed switching (t
stg
: storage time/t
f
: fall time is short)
• Low collector to emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE
linearity
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder Dip
5.0±0.1
2.5
±
0.1
90˚
1.0±0.2
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Rank P Q
h
FE1
160 to 320 120 to 250
Internal Connection
B
C
E
Marking Symbol: C5788
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power
T
C
= 25°CP
C
15 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 ∼ +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 060V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 60 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 60 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 01m
Forward current transfer ratio h
FE1
*
V
CE
= 4 V, I
C
= 1 A 120 320
h
FE2
V
CE
= 4 V, I
C
= 3 A 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= 3 A, I
B
= 375 mA 0.8 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 10 MHz 180 MHz
Turn-on time t
on
I
C
= 1 A, Resistance loaded 0.2 0.3 µs
Storage time t
stg
I
B1
= 0.1 A, I
B2
= − 0.1 A 0.55 0.7 µs
Fall time t
f
V
CC
= 50 V 0.1 0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
1
Publication date: November 2002 SJD00290AED
2SC5788
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High-speed switching (t
stg
: storage time/t
f
: fall time is short)
• Low collector to emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE
linearity
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder Dip
5.0±0.1
2.5
±
0.1
90˚
1.0±0.2
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Rank P Q
h
FE1
160 to 320 120 to 250
Internal Connection
B
C
E
Marking Symbol: C5788
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power
T
C
= 25°CP
C
15 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 ∼ +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 060V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 60 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 60 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 01m
Forward current transfer ratio h
FE1
*
V
CE
= 4 V, I
C
= 1 A 120 320
h
FE2
V
CE
= 4 V, I
C
= 3 A 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= 3 A, I
B
= 375 mA 0.8 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 10 MHz 180 MHz
Turn-on time t
on
I
C
= 1 A, Resistance loaded 0.2 0.3 µs
Storage time t
stg
I
B1
= 0.1 A, I
B2
= − 0.1 A 0.55 0.7 µs
Fall time t
f
V
CC
= 50 V 0.1 0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification