Power Transistors
1
Publication date: February 2003 SJD00048AED
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■ Features
• High forward current transfer ratio h
FE
which has satisfactory linearity
• Low collector-emitter saturation voltage V
CE(sat)
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) Self-supported type package is also prepared.
Rank Q P
h
FE2
70 to 150 120 to 250
Parameter Symbol Rating Unit
Collector-base voltage
2SB1172 V
CBO
−60 V
(Emitter open)
2SB1172A −80
Collector-emitter voltage
2SB1172 V
CEO
−60 V
(Base open)
2SB1172A −80
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−3A
Peak collector current I
CP
−5A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB1172 V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
(Base open)
2SB1172A −80
Base-emitter voltage V
BE
V
CE
= −4 V, I
C
= −3 A −1.8 V
Collector-emitter cutoff
2SB1172 I
CES
V
CE
= −60 V, V
BE
= 0 −200 µA
current (E-B short)
2SB1172A V
CE
= −80 V, V
BE
= 0 −200
Collector-emitter cutoff
2SB1172 I
CEO
V
CE
= −30 V, I
B
= 0 −300 µA
current (Emitter open)
2SB1172A V
CE
= −60 V, I
B
= 0 −300
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −1mA
Forward current transfer ratio h
FE1

*
V
CE
= −4 V, I
C
= −1 A 70 250 
h
FE2
V
CE
= −4 V, I
C
= −3 A 10
Collector-emitter saturation voltage V
CE(sat)
I
C
= −3 A, I
B
= − 0.375 A −1.2 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= −1 A, I
B1
= − 0.1 A, I
B2
= 0.1 A
0.5 µs
Storage time t
stg
V
CC
= −50 V 1.2 µs
Fall time t
f
0.3 µs