Power Transistors
1
Publication date: March 2003 SJD00036BED
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
■ Features
• High collector-base voltage (Emitter open) V
CBO
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−400 V
Collector-emitter voltage (Base open) V
CEO
−400 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emiter open) V
CBO
I
C
= −100 µA, I
E
= 0 −400 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −500 µA, I
B
= 0 −400 V
Emiter-base voltage (Collector open) V
EBO
I
E
= −100 µA, I
C
= 0 −5V
Forward current transfer ratio h
FE
V
CE
= −5 V, I
C
= −30 mA 30 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA −2.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −50 mA, I
B
= −5 mA −1.5 V
Transition frequency f
T
V
CB
= −30 V, I
E
= 20 mA, f = 200 MHz 70 MHz
Collector output capacitance C
ob
V
CB
= −30 V, I
E
= 0, f = 1 MHz 9 pF
(Common base, input open circuited)