2SA2097
2002-08-21 1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097

High-Speed Swtching Applications
DC-DC Converter Applications


Gb7G20 High DC current gain: h
FE
= 200 to 500 (I
C
= −0.5 A)
Gb7G20 Low collector-emitter saturation: V
CE (sat)
= −0.27 V (max)
Gb7G20 High-speed switching: t
f
= 55 ns (typ.)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
G2d50 V
Collector-emitter voltage V
CEO
G2d50 V
Emitter-base voltage V
EBO
G2d7 V
DC I
C
G2d5
Collector current
Pulse I
CP
G2d10
A
Base current I
B
G2d0.5 A
Ta G3d 25°C 1
Collector power
dissipation
Tc G3d 25°C
Pc
20
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55 to 150 °C

Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d G2d50 V, I
E
G3d 0 Gbe Gbe G2d100 nA
Emitter cut-off current I
EBO
V
EB
G3d G2d7 V, I
C
G3d 0 Gbe Gbe G2d100 nA
Collector-emitter brakedown voltage V
(BR) CEO
I
C
G3d G2d10 mA, I
B
G3d 0 G2d50 Gbe Gbe V
h
FE
(1)

V
CE
G3d G2d2 V, I
C
G3d G2d0.5 A 200 Gbe 500
DC current gain
h
FE
(2)

V
CE
G3d G2d2 V, I
C
G3d G2d1.6 A 100 Gbe Gbe

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d G2d1.6 A, I
B
G3d G2d53 mA Gbe Gbe G2d0.27 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d G2d1.6 A, I
B
G3d G2d53 mA Gbe Gbe G2d1.10 V
Rise time t
r
Gbe 63 Gbe
Storage time t
stg
Gbe 280 Gbe Switching time
Fall time t
f

See Figure 1 circuit diagram
V
CC
G7e
G2d
G2d24 V, R
L
G3d 15 G57
I
B1
G3d G2dI
B2
G3d G2d53 mA
Gbe 55 Gbe
ns


Unit: mm


JEDEC ―
JEITA SC-64
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)