2SA2067
器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：74.02KB，共3页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: January 2003 SJD00286BED
2SA2067
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t
stg
: storage time/t
f
: fall time is short)
• Low collector-emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE
linearity
• Allowing automatic insertion eith radial taping
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−60 V
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−3A
Peak collector current I
CP
−6A
Collector power dissipation P
C
15 W
T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −10 mA, I
B
= 0 −60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −60 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −6 V, I
C
= 0 −1mA
Forward current transfer ratio h
FE1
*
V
CE
= −4 V, I
C
= −1 A 120 320
h
FE2
V
CE
= −4 V, I
C
= −3 A 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= −3 A, I
B
= − 375 mA − 0.8 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.1 A, f = 10 MHz 90 MHz
Turn-on time t
on
I
C
= −1 A, Resistance loaded 0.3 µs
Storage time t
stg
I
B1
=
− 0.1 A, I
B2
= 0.1 A 0.7 µs
Fall time t
f
V
CC
= 50 V 0.15 µs
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder Dip
5.0±0.1
2.5
±
0.1
90˚
1.0±0.2
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
B
C
E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q P
h
FE1
120 to 250 160 to 320
1
Publication date: January 2003 SJD00286BED
2SA2067
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t
stg
: storage time/t
f
: fall time is short)
• Low collector-emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE
linearity
• Allowing automatic insertion eith radial taping
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−60 V
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−3A
Peak collector current I
CP
−6A
Collector power dissipation P
C
15 W
T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −10 mA, I
B
= 0 −60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −60 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −6 V, I
C
= 0 −1mA
Forward current transfer ratio h
FE1
*
V
CE
= −4 V, I
C
= −1 A 120 320
h
FE2
V
CE
= −4 V, I
C
= −3 A 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= −3 A, I
B
= − 375 mA − 0.8 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.1 A, f = 10 MHz 90 MHz
Turn-on time t
on
I
C
= −1 A, Resistance loaded 0.3 µs
Storage time t
stg
I
B1
=
− 0.1 A, I
B2
= 0.1 A 0.7 µs
Fall time t
f
V
CC
= 50 V 0.15 µs
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder Dip
5.0±0.1
2.5
±
0.1
90˚
1.0±0.2
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
B
C
E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q P
h
FE1
120 to 250 160 to 320