TECHNICAL DATA

PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices Qualified Level
2N5795
2N5796
2N5796U




JAN
JANTX
JANTXV


MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage
V
CEO

60 Vdc
Collector-Base Voltage
V
CBO

60 Vdc
Emitter-Base Voltage
V
EBO

5.0 Vdc
Collector Current
I
C

600 mAdc

One
(1)

Section

Both
(2)

Sections

Total Power Dissipation @ T
A
= +25
0
C
P
T

0.5 0.6 W
Operating & Storage Junction Temperature Range
T
J,
T
stg

-65 to +175
0
C
1) Derate linearly 2.86 mW/
0
C for T
A
≥ +25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
≥ +25
0
C

TO-78*


6 PIN SURFACE
MOUNT*

*See
MILPRF19500/496 for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
60 Vdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CBO
= 60 Vdc

I
CBO


10
10
ηAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc

I
EBO


100
10
ηAdc
µAdc








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