TECHNICAL DATA

N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385
Devices Qualified Level
2N4856 2N4857 2N4858 2N4859 2N4860 2N4861




JAN
JANTX
JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +250C unless otherwise noted)

Parameters / Test Conditions

Symbol
2N4856
2N4857
2N4858
2N4859
2N4860
2N4861

Unit
Gate - Source Voltage V GS - 40 - 30 V
Drain - Source Voltage V DS 40 30 V
Drain - Gate Voltage V DG 40 30 V
Gate Current I G 50 mA
Power Dissipation
T A = +25 0 C (1)
T C = +25 0 C (2)
P T 0.36
1.8
W
W
Operat ing Junction & Storage Temperature Range T j , T stg - 65 to +200 0 C
(1) Derate linearly 2.06 mW/ 0 C for T A > 25 0 C.
(2) Derate linearly 10.3 mW/ 0 C for T C > 25 0 C.



TO - 18*
(TO - 206AA)

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Units
Gate - Source Breakdown Voltage
V DS = 0, I G = 1.0 µAdc 2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861

V (BR)GSS

- 40
- 30

Vdc
Gate - Source “Off” State Voltage
V DS = 15 Vdc, I D = 0.5 ηAdc 2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861


V GS(on)

- 4.0
- 2.0
- 0.8

- 10
- 6.0
- 4.0


Vdc
Gate Reverse Current
V DS = 0, V GS = - 20 Vdc 2N4856, 2N4857, 2N4858
V DS = 0, V GS = - 15 Vdc 2N4859, 2N4860, 2N4861

I GSS

- 0.25
- 0.25

ηA
Drain Current
V GS = - 10 Vds, V DS = 15 Vdc I D(off) 0.25 ηA

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