TECHNICAL DATA

PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336
Devices Qualified
Level
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U




JAN
JANTX
JANTXV


MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector - Emitter Voltage
V
CEO

60 Vdc
Collector - Base Voltage
V
CBO

60 Vdc
Emitter - Base Voltage
V
EBO

5.0 Vdc
Collector Current
I
C

50 mAdc
One
Section
1
Both
Sections
2


Total Power Dissipation @ T
A
= +25
0
C
P
T

0.5 0.6 W
Operating & Storage Junction Temperature Range
T
J ,
T
stg

- 65 to +200
0
C
1) Derate linearly 2.86 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
> +25
0
C





TO - 78*



*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Base Breakdown Voltage
I
C
= 10 µAdc

V
(BR) CBO


60

Vdc
Collector - Emitter Breakdown Current
I
C
= 10 mAdc

V
(BR) CEO


60

Vdc
Emitter - Base Breakdown Voltage
I
E
= 10 µAdc

V
(BR) EBO


5.0

Vdc
Coll ector - Base Cutoff Current
V
CB
= 50 Vdc

I
CBO


10

ηAdc
Emitter - Base Cutoff Current
V
EB
= 4.0 Vdc

I
EBO


10

ηAdc





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