(CONTINUED ON REVERSE SIDE)
R0


2N2411
2N2412


PNP SILICON TRANSISTOR


JEDEC TO-18 CASE


DATA SHEET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.


MAXIMUM RATINGS:
SYMBOL UNITS

Collector-Base Voltage V
CBO
25 V

Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
100 mA

Power Dissipation P
D
0.5 W
Power Dissipation (T
C
=25°C) P
D
1.2 W
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +200 °C
Thermal Resistance Θ
JA
350 °C/W
Thermal Resistance Θ
JC
146 °C/W

ELECTRICAL CHARACTERISTICS:

2N2411 2N2412
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

I
CES
V
CE
=15V 10 10 nA
I
CES
V
CE
=15V, T
A
=150°C 10 10 µA
I
EBO
V
EB
=5.0V 10 µA
BV
CBO
I
C
=10µA 25 25 V
BV
CEO
I
C
=10mA 15 15 V
V
CE(SAT)
I
C
=10mA, I
B
=1.0mA 0.2 0.2 V
V
BE(SAT)
I
C
=10mA, I
B
=1.0mA 0.7 0.9 0.7 0.9 V
h
FE
V
CE
=0.5V, I
C
=50µA 10 20
h
FE
V
CE
=0.5V, I
C
=10mA 20 60 40 120
h
FE
V
CE
=0.5V, I
C
=10mA, T
A
=-55°C 10 20
h
FE
V
CE
=1.0V, I
C
=50mA 10 20
h
fe
V
CE
=10V, I
C
=10mA, f=100MHz 1.4 1.4
C
ob
V
CB
=5.0V, I
E
=0, f=1.0MHz 5.0 5.0 pF
C
ib
V
EB
=0.5V, I
C
=0, f=1.0MHz 8.0 8.0 pF