1N4148-1
器件描述:Silicon Switching Diode
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器件资料摘要:
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55
o
C PIV 100 (Min). Volts
Average Rectified Current Iavg 200 mAmps
Continuous Forward Current I
Fdc
300 mAmps
Peak Surge Current (t
peak
= 1 sec.) I
peak
1.0 Amp
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body P
tot
500 mWatts
Operating Temperature Range T
Op
-65 to +200
o
C
Storage Temperature Range T
St
-65 to +200
o
C
Electrical Characteristics @ 25
o
C* Symbol Minimum Maximum Unit
Forward Voltage Drop @ I
F
= 10 mA V
F
*** 1.00 Volts
Breakdown Voltage @ I
R
= 5 µA PIV 75 Volts
Breakdown Voltage @ I
R
= 100µA PIV 100 Volts
Reverse Leakage Current @ V
R
= 75 V I
R
5 (100 @ 150
o
C) µA
Applications
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Hermetic Glass Body
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings-
i
Silicon Switching Diode DO-35 Glass Package
1N4148
or
1N4148-1
Note 1: Per Method 4031-A with I
F
= 10 mA,Vr = 6 V, R
L
= 100 Ohms. * UNLESS OTHERWISE SPECIFIED
Reverse Recovery time (note 1) t
rr
4.0 nSecs
Capacitance @ V
R
= 0 V, f = 1mHz C
T
4.0 pF
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135