1617-35
器件资料摘要：
R.1.A.990106-HERIC
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1540 – 1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55AT
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C 290 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)50V
Emitter to Base Voltage (BV
ebo
)3. V
Collector Current (I
c
)6A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out F = 1660 MHz 35 W
P
in
Power Input Vcc = 28 Volts 6 W
P
g
Power Gain PW = Note 1 7.6 dB
η
c
Collector Efficiency DF = Note 1 50 %
VSWR Load Mismatch Tolerance F = 1540 MHz 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 20 mA 3.0 V
BV
ces
Collector to Emitter Breakdown Ic = 60 mA 50 V
h
FE
DC – Current Gain Vce = 5V, Ic = 500mA 20
θjc
2
Thermal Resistance 0.6 °C/W
NOTE 1: 5 µs at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1540 – 1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55AT
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C 290 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)50V
Emitter to Base Voltage (BV
ebo
)3. V
Collector Current (I
c
)6A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Out F = 1660 MHz 35 W
P
in
Power Input Vcc = 28 Volts 6 W
P
g
Power Gain PW = Note 1 7.6 dB
η
c
Collector Efficiency DF = Note 1 50 %
VSWR Load Mismatch Tolerance F = 1540 MHz 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 20 mA 3.0 V
BV
ces
Collector to Emitter Breakdown Ic = 60 mA 50 V
h
FE
DC – Current Gain Vce = 5V, Ic = 500mA 20
θjc
2
Thermal Resistance 0.6 °C/W
NOTE 1: 5 µs at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999