BFG 19S
Oct-26-19991
NPN Silicon RF Transistor
G01 For low noise, low distortion broadband
amplifiers in antenna and
telecommunication systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
VPS05163
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG 19S BFG19S 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
3
Collector current I
C
100 mA
Base current I
B
12
Total power dissipation, T
S
G01 75 °C
1)
P
tot
1 W
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point R
thJS
G01 75
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb