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AVD035

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:17.15KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS T C = 25 O C

SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 10 mA 65 V
BV CER I C = 10 mA R BE = 10 Ω 6 5 V
BV EBO I E = 1 mA 3.5 V
I CES V CE = 50 V 5.0 mA
h FE V CE = 5.0 V I C = 500 mA 15 120 ---
P
G
ηC V CC = 50 V P OUT = 35 W f = 1025 - 1150 MHz
10
35
dB
%

NPN SILICON RF POWER TRANSISTOR
AVD035F
DESCRIPTION:
The ASI AVD035F is Designed for

FEATURES:


• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 2.5 A PEAK
V CB 55 V
P DISS 100 W PEAK
T J - 65 O C to +200 O C
T STG - 65 O C to +150 O C
θJC 1.0 O C/W

PACKAGE STYLE .250 2L FLG (B)



















ORDER CODE: ASI10558
MINIMUM
inches / mm
1.050 / 26.67
.120 / 3.05
.245 / 6.22
.552 / 14.02
.790 / 20.07
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.572 / 14.53
.810 / 20.57
.140 / 3.56
inches / mm

H .003 / 0.08 .007 / 0.18
DIM
K
I
J
.052 / 1.32 .072 / 1.83
.130 / 3.30
.088 x 45°
CHAMFER
A
B
Ø D
E
F
G
H
I
K
C
J
.100 X 45°
.095 / 2.41 .105 / 2.67
.285 / 7.24
.210 / 5.33
.120 / 3.05