Power Transistors
1
Publication date: January 2003 SJD00098BED
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• High transition frequency f
T
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Conditions Min Typ Max Unit
Emitter-base voltage (Collector open) V
EBO
I
E
= 0.1 mA, I
C
= 07 V
Base-emitter voltage V
BE
V
CE
= 20 V, I
C
= 40 mA 1.2 V
Collector-emitter cutoff current I
CER
V
CE
= 250 V, R
BE
= 100 kΩ 100 µA
(Resistor between B and E)
Forward current transfer ratio h
FE1
V
CE
= 20 V, I
C
= 40 mA 40 
h
FE2
V
CE
= 50 V, I
C
= 5 mA 30
Collector-emitter saturation voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 100 MHz
Collector output capacitance C
ob
V
CB
= 50 V, I
E
= 0, f = 1 MHz 3.0 4.5 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note)
*
1: Without heat sink
*
2 :With a 100 × 100 × 2 mm Al heat sink
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
250 V
Collector-emitter voltage (Base open) V
CEO
250 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
150 mA
Collector power dissipation P
C
1.2
*
1
W
4
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C