BSH114
器件描述：N-channel enhancement mode field effect transistor
器件厂商：PHILIPS [Philips Semiconductors]
文件大小：287.27KB，共13页
Sponsor by e络盟器件资料摘要：
BSH114
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000 Product specification
c
c
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSH114 in SOT23.
2. Features
a73 TrenchMOS™ technology
a73 Low on-state resistance
a73 Very fast switching
a73 Surface mount package.
3. Applications
a73 Relay driver
a73 DC to DC converter
a73 General purpose switch.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003Top view
12
3
s
d
g
MBB076
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000 Product specification
c
c
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSH114 in SOT23.
2. Features
a73 TrenchMOS™ technology
a73 Low on-state resistance
a73 Very fast switching
a73 Surface mount package.
3. Applications
a73 Relay driver
a73 DC to DC converter
a73 General purpose switch.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003Top view
12
3
s
d
g
MBB076