Power Transistors
1
Publication date: February 2003 SJD00094BED
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Output of 3 W can be obtained by a complementary pair with
2SA0885
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 1 mA, I
E
= 045V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 03
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 20 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 5 V, I
C
= 010µA
Forward current transfer ratio h
FE1
*
V
CE
= 10 V, I
C
= 500 mA 85 340 
h
FE2
V
CE
= 5 V, I
C
= 1 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.5 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
45 V
Collector-emitter voltage (Base open) V
CEO
35 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1.2 W
5.0
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: With a 100 × 100 × 2 mm Al heat sink