TO-92 Plastic-Encapsulated Transistors


2SC1674 TRANSISTOR (NPN)

FEATURE
Power dissipation
P
CM
: 0. 25 W (Tamb=25℃)
Collector current
I
CM
: 0.02 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
Ic= 100µA , I
E
=0 30 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= 1 mA, I
B
=0 20 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
= 100µA, I
C
=0 4 V
Collector cut-off current I
CBO
V
CB
= 30V, I
E
=0 0.1 µA
Emitter cut-off current I
EBO
V
EB
=3V , I
C
=0 0.1 µA
DC current gain h
FE
V
CE
=6 V, I
C
= 1mA 40 180
Collector-emitter saturation voltage V
CE(sat)
I
C
=10 mA, I
B
= 1 mA 0.3 V
Base-emitter voltage V
BE
(ON) V
CE
=6 V, I
C
= 1mA 0.72 V
Transition frequency f
T
VCE=6 V, IC= 1mA 400 MHz
Collector output capacitance C
ob
VCE=6V, IE=0, f=1MHz 1.5 pF
Noise figure NF
V
CE
=6V, I
C
=1mA, f=100MHz,
R
S
=50Ω
5 dB
Power gain G
P
VCE=6V,IC=1mA,f=100MHz 18 dB

CLASSIFICATION OF h
FE(1)

Rank Y GR BL
Range 40-80 60-120 90-180



1 2 3
TO-92



1. EMITTER

2. COLLECTOR

3. BASE
.
Transys
Electronics
LIM ITED